LASERS AND DIODES
1,400 nm to 2,000 nm semiconductor laser diodes
19 November 2008
nLIGHT has released a generation of 1,400nm to 2,000nm semiconductor laser diodes based on indium phosphide (InP).
These wavelengths open up a wide range of surgical and aesthetic medical applications through either direct use or to pump holmium or erbium lasers.
At 1.9 microns, the Pearl fibre-coupled module provides up to 20W output power from a single 400 micron 0.22NA fibRE with >10 per cent wall-plug efficiency. Single emitter chips produce up to 1.5W rated power on expansion matched substrates.
At 1.4 and 1.5 microns, the Pearl module provides up to 40W from a single 400 micron 0.22NA fibre and >30 per cent wall-plug efficiency. Single emitter chips produce up to 3.5W rated power on expansion matched substrates.