Opto Diode launches active area electron detection device

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Opto Diode Corporation has introduced the AXUV100G, a 100mm x 100mm active area electron detection device for use in radiation detection applications.

The electron photodetector features electron responsivity at energy levels as low as 100eV. The shunt resistance is at 20Mohms (minimum), while reverse breakdown voltage is 5V (minimum) and 10V (typical). The AXUV100G’s capacitance is 5nF (typical) and rise time is at a maximum of 10µs. 

Ambient storage and operating temperatures range from -10 to 40°C, while nitrogen or vacuum storage and operating temperatures range from -20 to 80°C. The lead soldering temperature for the UV device is 260°C.