ITW Photonics Group  member Opto Diode has announced the first in a new series of super high-power gallium aluminum arsenide (GaAlAs) infrared (IR) emitters.

The OD-110L has ultra high optical output with a very narrow optical beam, for night vision (NV) and other military imaging applications. The OD-110L is housed in a standard 3-lead, hermetically-sealed TO-39 package to accommodate the small-size (0.026 x 0.026-inch) chip. There are four wire bonds on die corners and all surfaces are gold-plated for added durability. 

Typically, the total power output at 25C is 110mW and the minimum output is 55mW with peak emission wavelength at 850nm. The absolute maximum rating at 25C for power dissipation is 1000mW, with a continuous-forward-current rating at 500mW. The OD-110L lead-soldering temperature (1/16-inch from the case for 10 seconds) is 260C. Storage and operating temperatures range from -40C to 100C, making these devices suitable for harsh environments and for integration into illuminators and markers, and systems utilising NV goggles and cameras.