OD-110L infrared emitters

ITW Photonics Group member Opto Diode has announced the first in a new series of super high-power gallium aluminium arsenide (GaAlAs) infrared (IR) emitters.

The OD-110L has ultra high optical output with a very narrow optical beam, for night vision (NV) and other military imaging applications. The OD-110L is housed in a standard three-lead, hermetically-sealed TO-39 package to accommodate the small-size (0.026 x 0.026-inch) chip.

There are four wire bonds on die corners and all surfaces are gold-plated for added durability. Typically, the total power output at 25°C is 110mW and the minimum output is 55mW with peak emission wavelength at 850nm. The absolute maximum rating at 25°C for power dissipation is 1000mW, with a continuous-forward-current rating at 500mW. The OD-110L lead-soldering temperature (1/16-inch from the case for 10 seconds) is 260°C. Storage and operating temperatures range from -40°C to 100°C, making these devices suitable for harsh environments and for integration into illuminators and markers, and systems utilising NV goggles and cameras.