Opto Diode has introduced the 20mm2 photodiode with a circular active area for electron detection. The device offers 100 per cent internal quantum efficiency and high stability. The absence of a surface dead region results in 100 per cent collection efficiency.
The radiation-hard, junction-passivating, oxynitride protective entrance window makes the device stable even after exposure to intense flux of UV photons (showing less than 2 per cent responsivity degradation after MJ/cm2 of 254nm and tens of kJ/cm2 of 193nm photon exposure). The radiation-hardness makes these diodes suitable for space missions and satellite applications.
The product features a typical rise time of 1.7µsec, a minimum rise time of 0.8µsec, and a maximum of 3.3µsec. Housed in a TO-8 package, the UVG20C offers peak responsivity of 800nm at approximately 0.56 A/W.
Opto Diode’s UVG20C absolute devices’ thermal parameters offer storage temperatures ranging from -20 to 100°C; operating temperatures range from -20 to 80°C.