PRESS RELEASE

Epitaxially grown quantum dot lasers

Optical engines and components developer VI Systems (VIS) has introduced a universal epitaxial growth technique for high-density InAs-GaAs-based quantum dots (QDs) applicable to QD lasers and other advanced devices. 1300nm QD lasers are known to reach very high transmission speeds of up to 25Gbit/s with very low power consumption, and also demonstrate a low linewidth enhancement factor. The devices may be suitable for applications from fibre-to-the-home communication networks to frequency conversion, mode-locking and microwave generation.

The company says that a unique technology allows the realisation of threshold current density of approximately 4A/cm2 per QD layer in multi-stack QD lasers in broad area and narrow stripe devices. Wafers based on foundry-based epitaxial growth are offered.

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