Olympus has introduced its OLS3000IR LEXT IR confocal laser scanning microscope, the latest member of its near-IR silicon inspection microscope range. Designed for the non-destructive, high resolution observation of the interior of silicon wafers, IC chips, MEMS and other devices, the LEXT IR uses a 1310nm laser to see through the silicon to the components.

Packaging technology of semiconductors is rapidly advancing along with the increase in the need for thinner and smaller electronics devices. This makes observation for research or quality control almost impossible, with many components and even circuits packed into a tight space. Joining the Olympus MX (inverted) and BX2M and BXFM (upright) silicon imaging systems, the LEXT OLS3000IR uses an infrared laser to illuminate features that cannot be seen visually, such as SIP (System in Package), three-dimensional mounting, and CSP (Chip Scale Package). In this way, these features can be inspected, measured and analysed without any destructive preparation.

The LEXT OLS3000IR can be used to inspect mounted silicon chips that are transparent to infrared light. The interior can be observed without destroying the mounted chip and defect analysis is easily performed. Device changes during heat and moisture tests can also be inspected non-destructively.

In addition, the three-dimensional mounting chip gap can be measured as the movement of the objective when infrared light is passed through the silicon then focused on the chip and interposer. This method can also be used in the measurement of key features in micro-electromechanial systems (MEMS).