OD-110W GaAlAs near-infrared (IR) Emitters

High powered OD-110W GaAlAs near-infrared (IR) Emitters have been launched by Opto Diode, an ITW company. Designed for night vision and surveillance applications, the new near-IR light-emitting diodes (near-IRLEDs) feature a uniform optical beam with a typical peak emission wavelength of 850nm and optical output of 140mW.

Suitable for rugged applications such as harsh industrial environments or deployment in the field, these durable near-IRLEDs are housed in standard 3-lead, TO-39 hermetically-sealed packages and have gold plating on all surfaces. The four wire bonds are positioned on the die corners to minimise potential artifacts in imaging applications.

The chip size is 0.026 x 0.026 inches and all materials are RoHS compliant. Typical performance includes a half intensity beam angle of 110°, forward voltage of 1.7 volts and rise and fall times of 20 nanoseconds each.