Opto Diode, a division of ITW, and a member of the ITW Photonics Group, has introduced a new photodiode with a circular active area, the SXUV Ø2.5mm. The new device provides excellent stability after extreme ultraviolet (EUV) conditions. It is housed in a TO-39, 3-pin, windowless package that delivers responsivity down to 1nm. The active area is typically Ø2.5 mm and has a minimum shunt resistance (Rsh) of 20 MOhms at ± 10 mV (typical).
The new photodiode is well suited for high power laser monitoring at wavelengths 1nm–200nm, or other tasks that require a highly-stable photodiode after EUV exposure.
The device parameters include reverse breakdown voltage of 20V, with the capacitance of 1 nanofarads (nF). The response time is 1 nanosecond (typical) to a maximum of 2 nanoseconds.
Storage and operating temperatures range from -10°C to 40°C (ambient) and from -20°C to 80°C (in nitrogen or vacuum conditions). The lead soldering temperature (0.08 inches from the case for 10 seconds) is 260°C; the maximum junction temperature is 70°C.