Opto Diode Corporation, an ITW company, has introduced an infrared light-emitting diode (IRLED) in a convenient TO-66 package for heatsink attachment, the OD-669. The high-power gallium aluminium arsenide (GaAlAs) IRLED illuminator features a peak emission of 880 nm with an extremely wide angle of emission. Designed with nine chips connected in series, the robust device is housed in an electrically-isolated case, making it ideal for covert aircraft lighting or covert anti-collision lighting in aviation applications.
Total power output ranges from 390 mW (minimum) to 500 mW (typical) under test conditions at 300 mA. The spectral bandwidth at 50 per cent is 80 nm, and the half intensity beam angle is typically 120 degrees. The forward voltage of the OD-669 ranges from 13.5 volts (typical) to 15 volts (maximum); reverse breakdown voltage is at minimum 5 volts and 30 volts (typical). Capacitance is 11 pF; the rise time and fall time is typically 3 µsec. Thermal parameters include the storage and operating temperature ranges of -55 °C to 100 °C and the maximum junction temperature of 100 °C.