New Infrared Technologies has launched a series of VPD Pbse detectors, processed on 8-inch diameter (200mm) silicon substrates.
The company has successfully adapted its production line and manufacturing processes to produce the detectors. During the set-up phase, several significant modifications to the method of manufacturing VPD PbSe detectors were introduced.
These changes in the process allow a decrease in the temperatures when processing the active material, while reaching a quantitative improvement of the production yield. They also guarantee the full compatibility of the low temperature VPD PbSe process (LT-VPD PbSe) with CMOS technology, which will allow the ROIC integration and the production of larger format, even faster, and low power consumption focal plane arrays in the mid-term, while keeping its main characteristics of detection in the 1 to 5 micron MWIR range, uncooled performance at room temperature, and ultrafast detection.
The new generation of FPA will bring uncooled IR detection beyond the current limitations in terms of speed and high-resolution imaging, while also offering multiple and innovative solutions for civilian, industrial and military applications.