PRESS RELEASE

Annular Quadrant Silicon Photodiodes

OSI Optoelectronics, an OSI Systems Company, has introduced its Annular Quadrant Silicon Photodiodes which operate between 350nm to 1100nm and are used for backscatter reflectivity measurements

OSI Optoelectronics, an OSI Systems Company, has introduced its Annular Quadrant Silicon Photodiodes which operate between 350nm to 1100nm and are used for backscatter reflectivity measurements.

 

The new silicon quadrant detector features an annular package design and includes a 200µm laser-cut hole on the chip and the header that enables a fibre to be coupled from the back of the detector. This ensures that the detector sensing area is always normal to the direction of the light, reducing the need for angular compensation during backscatter measurements. Available in TO-5 and TO-8 metal packages, the active area on each element is 1.6mm2 and 19.6mm2 respectively. The element gap between the segments is ~0.10mm. The spectral range is from 190nm to 1100nm with a typical peak wavelength of 980nm. With responsivity at 790nm, the typical A/W is 0.52.

 

OSI Optoelectonics’ new backscatter detector for reflectivity measurements operates between -20°C and +60°C.  Storage temperatures range from -20°C to +80°C.