OSI Laser Diode has introduced the CVN 63-90ECL, a 905nm pulsed laser diode with an integrated micro lens. The new device offers a far-field beam pattern with equivalent divergence values (8 x 8 degrees FWHM) for both the Fast (perpendicular) and the Slow (parallel) axes of emission. The adjusted far-field pattern offers higher coupling efficiency into standard spherical lens systems, making the diode ideal for critical defense applications.
Hermetically sealed in a robust 9mm package for survivability in harsh environmental conditions, the pulsed laser diode is well suited for military tasks such as field-deployed range finders. The RoHS-compliant device operates from 895nm to 915nm, with typical wavelength operation at 905nm. Peak power is 75W (min.), pulse width is 100 nanoseconds (typ.) and the drive current is typically 30A. Storage temperatures range from -40°C to +85°C; the typical operating temperature is 25°C.
OSI Laser Diode’s new CVN 63-90ECL joins the previously announced CVLL 350-CL90 pulsed laser diode with integrated micro lens that operates at 1550nm.